At room temperature, a possible value for the mobility of electrons in the inversion layer of a silicon n-channel MOSFET is

A. 450\,cm^{2}\,/V-s

B. 1350\,cm^{2}\,/V-s

C. 1800\,cm^{2}\,/V-s

D. 3600\,cm^{2}\,/V-s

Options

The strongest acid amongst the following compounds is:

A. CH3COOH

B. HCOOH

C. CH3CH2CH(Cl)CO2H

D. ClCH2CH2CH2COOH

A. CH3COOH

B. HCOOH

C. CH3CH2CH(Cl)CO2H

D. ClCH2CH2CH2COOH

A. CH3COOH

B. HCOOH

C. CH3CH2CH(Cl)CO2H

D. ClCH2CH2CH2COOH

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